Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor

In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in class-E amplifier. Instead applying zero voltage switching control, requires frequency sampling at (>600 V), developed an innovative control method called minimum power input control. The output can be presented simple empirical equations allowing optimal transfer efficiency for 6.78 MHz resonant wireless (WPT). order to reduce loss, gate drive design D-mode GaN is highly influential reliability WPT, was also produced and described here circuit designers.